- Advanced CMOS IC
- Opto components
- high voltage/ high electric current IC
- supply 6-8 inch thick SOI and 8-12 inch thin SOI
SOI wafer is the base wafer covered by a layer of single silicon which thickness between 50 nanometers and 100 micrometers. The buried oxide is a insulating layer with thickness 0.1~3 um in order to isolate electricity.
4F., No. 12, Industry E. 9th Rd., Science based Industrial park, Hsinchu City 300096, Taiwan
TEL: (03)564-2132 ext.3402