SOI wafer is the base wafer covered by a layer of single silicon which thickness between 50 nanometers and 100 micrometers. The buried oxide is a insulating layer with thickness 0.1~3um in order to isolate electricity.
- advanced CMOS IC
- opto components
- high voltage/ high electric current IC
- customised spec.
- supply 6″-8″ thick SOI and 8″-12″ thin SOI