Description

Details:

SOI wafer is the base wafer covered by a layer of single silicon which thickness between 50 nanometers and 100 micrometers. The buried oxide is a insulating layer with thickness 0.1~3um in order to isolate electricity.

Use：

1. advanced CMOS IC
2. opto components
3. MEMS
4. high voltage/ high electric current IC

Spec：

1. customised spec.
2. supply 6″-8″ thick SOI and 8″-12″ thin SOI