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SOI(Silicon on Insulator)Wafer

Introduction

SOI wafer is the base wafer covered by a layer of single silicon which thickness between 50 nanometers and 100 micrometers. The buried oxide is a insulating layer with thickness 0.1~3um in order to isolate electricity.

Description

Details:

SOI wafer is the base wafer covered by a layer of single silicon which thickness between 50 nanometers and 100 micrometers. The buried oxide is a insulating layer with thickness 0.1~3um in order to isolate electricity.

Use:

  1. advanced CMOS IC
  2. opto components
  3. MEMS
  4. high voltage/ high electric current IC

Spec:

  1. customised spec.
  2. supply 6″-8″ thick SOI and 8″-12″ thin SOI