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SiC substrate polishing pad

Introduction

SiC is a hard and brittle material that is difficult to process. The polishing pad is matured with porous materials and is matched with a customized surface groove design. It is applied to the precision polishing process, which can effectively improve the process uniformity and wafer flatness.

Description

CMP technology uses the principle of “soft grinding and hardening” in wear, that is using softer materials for polishing to achieve high-quality surface polishing. Under the action of a certain pressure and polishing liquid, the polished wafer is placed on an elastic polishing pad that rotates in the same direction, and the polishing liquid continuously flows between the wafer and the polishing pad for polishing.

Spec :

Hard throw pad

  • High removal rate, high flatness
  • Can customize groove pattern
  • Hot pressing groove can be customize

Soft throw pad

  • Suede leather with low material loss
  • Teijin special polyurethane foam
  • Uniform pore size

Product Contact

Sam Lin

Sales Dept. Ⅲ, Wafer Material Div., 2nd Business Unit
Sales Assistant Manager

TOPCO SCIENTIFIC CO.,LTD.

4F., No. 12, Industry E. 9th Rd., Science based Industrial park, Hsinchu City 300096, Taiwan
TEL: (03)564-2132 ext.3413
e-mail: sam.lin@topco-global.com

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